- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,804
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
715
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,519
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 19A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 39W (Tc) | N-Channel | - | 55V | 19A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V |
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