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3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
1,157
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,312
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,958
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V |
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