- Производство :
- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
17 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,177
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET P-CH 55V 20A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,804
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,533
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,395
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 14A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 33W (Tc) | P-Channel | - | 55V | 14A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,837
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 20A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | ||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
715
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,495
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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|
ПОЛУЧИТЬ ЦИТАТЫ |
1,519
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 19A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 39W (Tc) | N-Channel | - | 55V | 19A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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3,558
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 20A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | - | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | - | - | |||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,485
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,525
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 10A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 28W (Tc) | N-Channel | - | 55V | 10A (Tc) | 140 mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,252
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 10A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 28W (Tc) | N-Channel | - | 55V | 10A (Tc) | 140 mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
874
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,188
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 20A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,635
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 10A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 28W (Tc) | N-Channel | - | 55V | 10A (Tc) | 140 mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | 4.5V, 10V | ±16V | ||
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2,861
Сегодня корабль + бесплатная ночная доставка
|
STMicroelectronics | MOSFET N-CH 55V 80A TO-220 | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.5 mOhm @ 40A, 10V | 1V @ 250µA | 136nC @ 5V | 4850pF @ 25V | 5V, 10V | ±16V | |||
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|
1,931
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 14A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 33W (Tc) | P-Channel | - | 55V | 14A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V |
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