- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
4 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,528
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 250µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,455
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,852
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | 55V | 80A (Tc) | 7.7 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,796
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | Automotive, AEC-Q101, SIPMOS® | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 300W (Tc) | N-Channel | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V |
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