- Packaging :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
3,789
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 540MA SOT23 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | - | 55V | 540mA (Ta) | 650 mOhm @ 270mA, 10V | 2V @ 2.7µA | 2.26nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V | ||
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3,402
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 540MA SOT23 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | - | 55V | 540mA (Ta) | 650 mOhm @ 270mA, 10V | 2V @ 2.7µA | 2.26nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V | |||
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1,030
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 540MA SOT23 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | - | 55V | 540mA (Ta) | 650 mOhm @ 270mA, 10V | 2V @ 2.7µA | 2.26nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V |
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