- Packaging :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
1,369
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NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8.3W (Tc) | N-Channel | - | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | 5.6nC @ 10V | 175pF @ 25V | 10V | ±20V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,316
Сегодня корабль + бесплатная ночная доставка
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NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8.3W (Tc) | N-Channel | - | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | 5.6nC @ 10V | 175pF @ 25V | 10V | ±20V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,115
Сегодня корабль + бесплатная ночная доставка
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NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8.3W (Tc) | N-Channel | - | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | 5.6nC @ 10V | 175pF @ 25V | 10V | ±20V |
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