- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
11 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
617
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Infineon Technologies | MOSFET N CH 55V 16A SOT 223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 35W (Tc) | N-Channel | - | 55V | 16A (Tc) | 58 mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,177
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Infineon Technologies | MOSFET P-CH 55V 20A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,804
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,568
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Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 110W (Tc) | N-Channel | - | 55V | 42A (Tc) | 13.5 mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | 1570pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,023
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Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 130W (Tc) | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
715
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,898
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Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 130W (Tc) | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,832
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 16A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 35W (Tc) | N-Channel | - | 55V | 16A (Tc) | 58 mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,252
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Infineon Technologies | MOSFET N-CH 55V 10A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 28W (Tc) | N-Channel | - | 55V | 10A (Tc) | 140 mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,635
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Infineon Technologies | MOSFET N-CH 55V 10A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 28W (Tc) | N-Channel | - | 55V | 10A (Tc) | 140 mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | 4.5V, 10V | ±16V | ||
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2,142
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 55V | 42A (Tc) | 13.5 mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | 1570pF @ 25V | 4.5V, 10V | ±16V |
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