- Производство :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
1,960
Сегодня корабль + бесплатная ночная доставка
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Renesas Electronics America | MOSFET N-CH 55V 160A TO-263-7 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7 | 1.8W (Ta), 250W (Tc) | N-Channel | - | 55V | 160A (Tc) | 3 mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | 10350pF @ 25V | 10V | ±20V | ||
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3,620
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 160A D2PAK-7 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 300W (Tc) | N-Channel | - | 55V | 160A (Tc) | 2.6 mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | 10V | ±20V |
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