- Packaging :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,593
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Vishay Siliconix | MOSFET P-CHAN 40V SO-8 | TrenchFET® Gen III | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | P-Channel | - | 40V | 9.9A (Ta), 14A (Tc) | 14.2 mOhm @ 10A, 10V | 2.3V @ 250µA | 100nC @ 10V | 4000pF @ 20V | 4.5V, 10V | ±20V | ||
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743
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Vishay Siliconix | MOSFET P-CHAN 40V SO-8 | TrenchFET® Gen III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | P-Channel | - | 40V | 9.9A (Ta), 14A (Tc) | 14.2 mOhm @ 10A, 10V | 2.3V @ 250µA | 100nC @ 10V | 4000pF @ 20V | 4.5V, 10V | ±20V | |||
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3,704
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET P-CHAN 40V SO-8 | TrenchFET® Gen III | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | P-Channel | - | 40V | 9.9A (Ta), 14A (Tc) | 14.2 mOhm @ 10A, 10V | 2.3V @ 250µA | 100nC @ 10V | 4000pF @ 20V | 4.5V, 10V | ±20V |
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