- Packaging :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,310
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Infineon Technologies | MOSFET N-CH 40V 21A 8TDSON | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 52W (Tc) | N-Channel | - | 40V | 21A (Ta), 98A (Tc) | 3.2 mOhm @ 50A, 10V | 2V @ 250µA | 25nC @ 10V | 1800pF @ 20V | 4.5V, 10V | ±20V | ||
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1,091
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Infineon Technologies | MOSFET N-CH 40V 21A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 52W (Tc) | N-Channel | - | 40V | 21A (Ta), 98A (Tc) | 3.2 mOhm @ 50A, 10V | 2V @ 250µA | 25nC @ 10V | 1800pF @ 20V | 4.5V, 10V | ±20V | |||
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849
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 40V 21A 8TDSON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 52W (Tc) | N-Channel | - | 40V | 21A (Ta), 98A (Tc) | 3.2 mOhm @ 50A, 10V | 2V @ 250µA | 25nC @ 10V | 1800pF @ 20V | 4.5V, 10V | ±20V |
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