- Производство :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
7 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
3,528
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 250µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,455
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,852
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.7 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,796
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | Automotive, AEC-Q101, SIPMOS® | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
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3,062
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET P-CH 50V 48A TO-220 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | P-Channel | - | 50V | 48A (Tc) | 30 mOhm @ 24A, 10V | 4.5V @ 250µA | 53nC @ 10V | 3660pF @ 25V | 10V | ±15V | |||
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1,664
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET P-CH 50V 48A TO-252 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150W (Tc) | P-Channel | - | 50V | 48A (Tc) | 30 mOhm @ 24A, 10V | 4.5V @ 250µA | 53nC @ 10V | 3660pF @ 25V | 10V | ±15V | |||
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711
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET P-CH 50V 48A TO-263 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 150W (Tc) | P-Channel | - | 50V | 48A (Tc) | 30 mOhm @ 24A, 10V | 4.5V @ 250µA | 53nC @ 10V | 3660pF @ 25V | 10V | ±15V |
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