Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 продукты
ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
MTB50P03HDLT4G
За единицу
$2.01
RFQ
1,175
Сегодня корабль + бесплатная ночная доставка
ON Semiconductor MOSFET P-CH 30V 50A D2PAK - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 2.5W (Ta), 125W (Tc) P-Channel 30V 50A (Tc) 25 mOhm @ 25A, 5V 2V @ 250µA 100nC @ 5V 4900pF @ 25V 5V ±15V
MMSF3P02HDR2G
За единицу
$0.57
RFQ
2,488
Сегодня корабль + бесплатная ночная доставка
ON Semiconductor MOSFET P-CH 20V 5.6A 8-SOIC - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 2.5W (Ta) P-Channel 20V 5.6A (Ta) 75 mOhm @ 3A, 10V 2V @ 250µA 46nC @ 10V 1400pF @ 16V 4.5V, 10V ±20V