- Производство :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,432
Сегодня корабль + бесплатная ночная доставка
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 2A SOT223 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 3.1W (Ta) | N-Channel | 100V | 2A (Ta) | 360 mOhm @ 2A, 10V | 2V @ 250µA | 10nC @ 10V | 185pF @ 50V | 4.5V, 10V | ±20V | |||
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677
Сегодня корабль + бесплатная ночная доставка
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Diodes Incorporated | MOSFET N-CH 30V 5.6A SOT223 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.8W (Ta) | N-Channel | 30V | 5.6A (Ta) | 29 mOhm @ 3.2A, 10V | 2V @ 250µA | 11.3nC @ 10V | 498pF @ 15V | 4.5V, 10V | ±20V |
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