- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,958
Сегодня корабль + бесплатная ночная доставка
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Diodes Incorporated | MOSFET N-CH 30V 10.8A PWRDI8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.18W (Ta) | N-Channel | 30V | 10.8A (Ta) | 12 mOhm @ 20A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 4.5V, 10V | ±20V | |||
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1,665
Сегодня корабль + бесплатная ночная доставка
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Diodes Incorporated | MOSFET N-CH 30V 10.8A PWRDI8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.18W (Ta) | N-Channel | 30V | 10.8A (Ta) | 12 mOhm @ 20A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 4.5V, 10V | ±20V | |||
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3,178
Сегодня корабль + бесплатная ночная доставка
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Diodes Incorporated | MOSFET BVDSS: 41V 60V,SO-8,T&R,2 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.25W (Ta) | N-Channel | 60V | 10.8A (Ta) | 9.5 mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | 4.5V, 10V | ±20V |
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