- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,611
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET P-CH 20V 40A 1212-8S | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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1,857
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET P-CH 20V 40A PPAK 1212 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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1,472
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET N-CH 12V 40A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.2W (Ta), 36W (Tc) | N-Channel | - | 12V | 40A (Tc) | 3.8 mOhm @ 15A, 4.5V | 1V @ 250µA | 110nC @ 8V | 3720pF @ 6V | 2.5V, 4.5V | ±8V |
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