Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN014-60LS,115
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
3,740
Сегодня корабль + бесплатная ночная доставка
NXP USA Inc. MOSFET N-CH 60V QFN3333 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 65W (Tc) N-Channel 60V 40A (Tc) 14 mOhm @ 10A, 10V 4V @ 1mA 19.6nC @ 10V 1264pF @ 30V 10V ±20V
PSMN7R0-40LS,115
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
1,925
Сегодня корабль + бесплатная ночная доставка
NXP USA Inc. MOSFET N-CH 40V QFN3333 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 65W (Tc) N-Channel 40V 40A (Tc) 7 mOhm @ 10A, 10V 4V @ 1mA 21.4nC @ 10V 1286pF @ 12V 10V ±20V