Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 продукты
ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHD9NQ20T,118
За единицу
$0.35
RFQ
2,105
Сегодня корабль + бесплатная ночная доставка
Nexperia USA Inc. MOSFET N-CH 200V 8.7A DPAK TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 88W (Tc) N-Channel 200V 8.7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA 24nC @ 10V 959pF @ 25V 10V ±30V
PH6030AL,115
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
2,851
Сегодня корабль + бесплатная ночная доставка
Nexperia USA Inc. MOSFET N-CH 30V 79A LFPAK TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) - Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 - N-Channel 30V 79A (Tc) 6 mOhm @ 15A, 10V 2.15V @ 1mA 24nC @ 10V 1425pF @ 12V - -