Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STD50NH02LT4
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RFQ
2,294
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STMicroelectronics MOSFET N-CH 24V 50A DPAK STripFET™ III Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 60W (Tc) N-Channel - 24V 50A (Tc) 10.5 mOhm @ 25A, 10V 1.8V @ 250µA 24nC @ 10V 1400pF @ 25V 5V, 10V ±20V
STD38NH02LT4
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RFQ
2,234
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STMicroelectronics MOSFET N-CH 24V 38A DPAK STripFET™ III Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) N-Channel - 24V 38A (Tc) 13.5 mOhm @ 19A, 10V 2.5V @ 250µA 24nC @ 10V 1070pF @ 25V 5V, 10V ±20V