- Part Status :
- Vce(on) (Max) @ Vge, Ic :
- Td (on/off) @ 25°C :
- Test Condition :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,224
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | Obsolete | Bulk | Standard | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 543W | D3Pak | 80ns | 118A | 650V | NPT | 2.4V @ 15V, 45A | 224A | - | 203nC | 15ns/100ns | 433V, 45A, 4.3 Ohm, 15V | ||
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2,520
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | IGBT 1200V 88A 500W D3PAK | - | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 500W | D3Pak | - | 88A | 1200V | NPT | 3.2V @ 15V, 40A | 160A | 1.38mJ (on), 906µJ (off) | 210nC | 22ns/163ns | 600V, 40A, 4.3 Ohm, 15V |
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