Current - Collector (Ic) (Max) :
Voltage - Collector Emitter Breakdown (Max) :
Current - Collector Pulsed (Icm) :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Reverse Recovery Time (trr) Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Td (on/off) @ 25°C Test Condition
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RFQ
2,955
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Toshiba Semiconductor and Storage IGBT 600V 50A 240W TO3P LH - Obsolete Tube Standard 150°C (TJ) Through Hole TO-3PL 240W TO-3P(LH) - 50A 600V 2.45V @ 15V, 50A 100A 1.3mJ (on), 1.34mJ (off) 90ns/300ns 300V, 50A, 13 Ohm, 15V
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1,445
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Toshiba Semiconductor and Storage IGBT 1000V 60A 170W TO3P LH - Obsolete Tube Standard 150°C (TJ) Through Hole TO-3PL 170W TO-3P(LH) 2.5µs 60A 1000V 2.8V @ 15V, 60A 120A - 330ns/700ns -