- Производство :
- Series :
- Package / Case :
- Supplier Device Package :
- Vce(on) (Max) @ Vge, Ic :
- Switching Energy :
- Td (on/off) @ 25°C :
- Test Condition :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,042
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | IGBT 900V 43A 250W TO220 | POWER MOS 7® | Obsolete | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 250W | TO-220 [K] | 43A | 900V | PT | 3.9V @ 15V, 15A | 60A | 200µJ (off) | 60nC | 9ns/33ns | 600V, 15A, 4.3 Ohm, 15V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,230
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | IGBT 1200V 43A 298W TO247 | - | Obsolete | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 298W | TO-247 | 43A | 1200V | NPT | 2.4V @ 15V, 11A | 80A | 400µJ (on), 1.3mJ (off) | 100nC | 23ns/180ns | 960V, 11A, 10 Ohm, 15V |
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