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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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991
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | IGBT 650V 120A 306W TO3P | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 306W | TO-3PN | 110ns | 120A | 650V | Trench Field Stop | 2.3V @ 15V, 60A | 180A | 2.46mJ (on), 520µJ (off) | 84nC | 25.6ns/71ns | 400V, 60A, 6 Ohm, 15V | |||
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1,548
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | IGBT 650V 120A 306W TO-3PN | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 306W | TO-3PN | 110ns | 120A | 650V | Trench Field Stop | 2.3V @ 15V, 60A | 180A | 2.46mJ (on), 520µJ (off) | 84nC | 25.6ns/71ns | 400V, 60A, 6 Ohm, 15V |
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