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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | Active | Bulk | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 595W | T-MAX™ [B2] | 134A | 650V | NPT | 2.4V @ 15V, 70A | 280A | 305nC | 18ns/170ns | 433V, 70A, 4.3 Ohm, 15V |
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