- Packaging :
- Input Type :
- Mounting Type :
- Supplier Device Package :
- Channel Type :
- Driven Configuration :
- Current - Peak Output (Source, Sink) :
- Прикладные фильтры :
4 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,460
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | IC MOSFET DRIVER LIMITING 16SOIC | - | Obsolete | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC | 0 V ~ 18 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500V | 43ns, 26ns | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,114
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | IC MOSFET DRIVER LIMITING 16SOIC | - | Obsolete | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC | 0 V ~ 18 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500V | 43ns, 26ns | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,216
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | IC DRIVER IGBT 2-CHAN PDSO-18-1 | - | Obsolete | Tape & Reel (TR) | Inverting | - | Surface Mount | 20-SOIC (0.295", 7.50mm Width), 18 Leads | PG-DSO-18-2 | 0 V ~ 18 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | - | 1A, 2A | 1200V | - | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,448
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | IC MOSFET DRIVER LIMITING 8-DIP | - | Obsolete | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 0 V ~ 18 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500V | 43ns, 26ns |
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