DMG10N60SCT

производитель :

Diodes Incorporated

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1587pF @ 16V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

178W (Tc)

Rds On (Max) @ Id, Vgs :

750 mOhm @ 5A, 10V

Series :

Automotive, AEC-Q101

Supplier Device Package :

TO-220AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA