DMN1032UCB4-7

производитель :

Diodes Incorporated

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

4.8A (Ta)

Drain to Source Voltage (Vdss) :

12V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-UFBGA, WLBGA

Packaging :

Digi-Reel®

Part Status :

Active

Power Dissipation (Max) :

900mW (Ta)

Rds On (Max) @ Id, Vgs :

26 mOhm @ 1A, 4.5V

Series :

-

Supplier Device Package :

U-WLB1010-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.2V @ 250µA