DMN3110LCP3-7

производитель :

Diodes Incorporated

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

3.2A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 8V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.52nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XFDFN

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

1.38W

Rds On (Max) @ Id, Vgs :

69 mOhm @ 500mA, 8V

Series :

-

Supplier Device Package :

X2-DFN1006-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

12V

Vgs(th) (Max) @ Id :

1.1V @ 250µA