DMNH3010LK3-13

производитель :

Diodes Incorporated

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

15A (Ta), 55A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2075pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

2W (Ta)

Rds On (Max) @ Id, Vgs :

9.5 mOhm @ 18A, 10V

Series :

Automotive, AEC-Q101

Supplier Device Package :

TO-252-4L

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA