FZT649TA

производитель :

Diodes Incorporated

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A, 2V

Frequency - Transition :

240MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

2W

Series :

-

Supplier Device Package :

SOT-223-4

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

600mV @ 300mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

25V