ZXMC3A18DN8TA

производитель :

Diodes Incorporated

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

5.8A, 4.8A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power - Max :

1.8W

Rds On (Max) @ Id, Vgs :

25 mOhm @ 5.8A, 10V

Series :

-

Supplier Device Package :

8-SO

Vgs(th) (Max) @ Id :

1V @ 250µA (Min)