EPC2012

производитель :

EPC

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

145pF @ 100V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 125°C (TJ)

Package / Case :

Die

Packaging :

Tape & Reel (TR)

Part Status :

Discontinued at Digi-Key

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

100 mOhm @ 3A, 5V

Series :

eGaN®

Supplier Device Package :

Die

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

+6V, -5V

Vgs(th) (Max) @ Id :

2.5V @ 1mA