GA20SICP12-247

производитель :

GeneSiC Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

45A (Tc)

Drain to Source Voltage (Vdss) :

1200V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

-

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

3091pF @ 800V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

282W (Tc)

Rds On (Max) @ Id, Vgs :

50 mOhm @ 20A

Series :

-

Supplier Device Package :

TO-247AB

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-