GP1M009A050HS

производитель :

Global Power Technologies Group

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

8.5A (Tc)

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1195pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

127W (Tc)

Rds On (Max) @ Id, Vgs :

850 mOhm @ 4.25A, 10V

Series :

-

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA