HTNFET-DC

производитель :

Honeywell Microelectronics & Precision Sensors

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 28V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

8-CDIP Exposed Pad

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

50W (Tj)

Rds On (Max) @ Id, Vgs :

400 mOhm @ 100mA, 5V

Series :

HTMOS™

Supplier Device Package :

-

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

10V

Vgs(th) (Max) @ Id :

2.4V @ 100µA