BDP950H6327XTSA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA, 1V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape & Reel (TR)

Part Status :

Last Time Buy

Power - Max :

5W

Series :

-

Supplier Device Package :

PG-SOT223-4

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

60V