BF771E6327HTSA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA, 8V

Frequency - Transition :

8GHz

Gain :

10dB ~ 15dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

580mW

Series :

-

Supplier Device Package :

PG-SOT23-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V