BFP650E6327HTSA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA, 3V

Frequency - Transition :

37GHz

Gain :

10.5dB ~ 21.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SC-82A, SOT-343

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

500mW

Series :

-

Supplier Device Package :

PG-SOT343-4

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V