BSO615CGHUMA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

3.1A, 2A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

2W

Rds On (Max) @ Id, Vgs :

110 mOhm @ 3.1A, 10V

Series :

SIPMOS®

Supplier Device Package :

PG-DSO-8

Vgs(th) (Max) @ Id :

2V @ 20µA