BSS816NW L6327

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

1.4A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 2.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 2.5V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-70, SOT-323

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

160 mOhm @ 1.4A, 2.5V

Series :

OptiMOS™

Supplier Device Package :

PG-SOT323-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

750mV @ 3.7µA