BSZ0904NSIATMA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

18A (Ta), 40A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

Schottky Diode (Body)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1463pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

2.1W (Ta), 37W (Tc)

Rds On (Max) @ Id, Vgs :

4 mOhm @ 30A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-TSDSON-8-FL

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA