BSZ15DC02KDHXTMA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

5.1A, 3.2A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 2.5V Drive

FET Type :

N and P-Channel Complementary

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

419pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

2.5W

Rds On (Max) @ Id, Vgs :

55 mOhm @ 5.1A, 4.5V

Series :

Automotive, AEC-Q101, HEXFET®

Supplier Device Package :

PG-TSDSON-8-FL

Vgs(th) (Max) @ Id :

1.4V @ 110µA