BTS282Z E3230

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

49V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

Temperature Sensing Diode

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

232nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-220-7

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

300W (Tc)

Rds On (Max) @ Id, Vgs :

6.5 mOhm @ 36A, 10V

Series :

TEMPFET®

Supplier Device Package :

PG-TO220-7-230

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 240µA