FF200R12KE4PHOSA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - IGBT - Модули

Configuration :

Half Bridge

Current - Collector (Ic) (Max) :

200A

Current - Collector Cutoff (Max) :

5mA

IGBT Type :

Trench Field Stop

Input :

Standard

Input Capacitance (Cies) @ Vce :

14nF @ 25V

Mounting Type :

Chassis Mount

NTC Thermistor :

No

Operating Temperature :

-40°C ~ 150°C

Package / Case :

Module

Part Status :

Active

Power - Max :

-

Series :

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 200A

Voltage - Collector Emitter Breakdown (Max) :

1200V