IPB80N06S2L07ATMA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3160pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape & Reel (TR)

Part Status :

Discontinued at Digi-Key

Power Dissipation (Max) :

210W (Tc)

Rds On (Max) @ Id, Vgs :

6.7 mOhm @ 60A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-TO263-3-2

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 150µA