IPC100N04S51R9ATMA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

7V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

100W (Tc)

Rds On (Max) @ Id, Vgs :

1.9 mOhm @ 50A, 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Supplier Device Package :

PG-TDSON-8-34

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.4V @ 50µA