IPD26N06S2L35ATMA2

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

621pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

68W (Tc)

Rds On (Max) @ Id, Vgs :

35 mOhm @ 13A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-TO252-3-11

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 26µA