IPG20N04S4L11AATMA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

20A

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerVDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

41W

Rds On (Max) @ Id, Vgs :

11.6 mOhm @ 17A, 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Supplier Device Package :

PG-TDSON-8-10

Vgs(th) (Max) @ Id :

2.2V @ 15µA