IPG20N10S4L22ATMA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

20A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1755pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerVDFN

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

60W

Rds On (Max) @ Id, Vgs :

22 mOhm @ 17A, 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Supplier Device Package :

PG-TDSON-8-4

Vgs(th) (Max) @ Id :

2.1V @ 25µA