IPP80N06S2L09AKSA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2620pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Discontinued at Digi-Key

Power Dissipation (Max) :

190W (Tc)

Rds On (Max) @ Id, Vgs :

8.5 mOhm @ 52A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-TO220-3-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 125µA