IPZ40N04S5L7R4ATMA1

производитель :

Infineon Technologies

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

40A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

34W (Tc)

Rds On (Max) @ Id, Vgs :

7.4 mOhm @ 20A, 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Supplier Device Package :

PG-TSDSON-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2V @ 10µA